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The GT10J303 is a silicon N-channel Insulated G...

The GT10J3
2025-02-01T11:06:00
RADHE KRISHNA COMPONENTS
The GT10J303 is a silicon N-channel Insulated G...

The GT10J303 is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching and motor control applications. Manufactured by Toshiba,

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